s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 30v r d s ( o n ) 200m ( v g s = - 10v ) r d s ( o n ) 380m ( v g s = - 4.5v ) a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s - 30 g ate- s our c e v ol tage v g s 20 conti nuous dr ai n cur r ent t a = 25 - 1.7 t a = 70 - 1.4 p ul s ed dr ai n cur r ent i d m - 10 p ow er di s s i pati on t a = 25 1.25 t a = 70 0.8 t her m al res i s tanc e.j unc ti on- to- a m bi ent 100 ( s ur fac e m ounted on f r4 boar d) 166 j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 i d p d w r t h ja v /w a g s d 2 3 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 0 3 ds-hf ( k i 2 3 0 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 30 v v d s = - 30v , v g s = 0v - 1 v d s = - 30v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 1.0 - 3.0 v v g s = - 10v , i d = - 1.7a 200 v g s = - 4.5v , i d = - 1.3a 380 o n s tate dr ai n c ur r ent * 1 i d ( o n ) v g s = - 10v , v d s - 5v - 6 a f or w ar d t r ans c onduc tanc e * 1 g fs v d s = - 10v , i d = - 1.7a 2.4 s input capac i tanc e * 2 c i ss 226 o utput capac i tanc e * 2 c o ss 87 rev er s e t r ans fer capac i tanc e * 2 c r ss 19 t otal g ate char ge * 2 q g 5.8 10 g ate s our c e char ge * 2 q g s 0.8 g ate dr ai n char ge * 2 q g d 1.5 t ur n- o n del ay t i m e * 3 t d ( o n ) 20 20 20 35 9.0 9.0 t ur n- o n ri s e t i m e * 3 t r t ur n- o ff del ay t i m e * 3 t d ( o f f ) 18 t ur n- o ff f al l t i m e * 3 t f 6.0 m ax i m um b ody - di ode conti nuous cur r ent i s - 1.25 a di ode f or w ar d v ol tage v s d i s = - 1.25a ,v g s = 0v - 0.8 - 1.2 v v g s = 0v , v d s = - 15v , f= 1m hz v g s = - 10v , v d s = - 4.5v , i d = - 1.7a v g s = - 10v , v d s = - 15v , r l = 15 ,r g e n = 6 i d = - 1.0a pf nc ns z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1 * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . * 2 f or de s ig n a id o nly , not s ubj ec t to pr oduc ti on tes ti ng. * 3 s w i tc hi ng ti m e i s es s enti al l y i ndependent of oper ati ng tem per atur e. mar k ing m ar k i ng a 3* f p-cha nne l mo s f e t si2 3 0 3 ds-hf ( k i 2 3 0 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d ? gate-to-source v oltage (v) q g ? t o ta l ga te ch a rg e ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction t emperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0 2 4 6 8 10 0 1 2 3 4 5 6 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 0 50 100 150 0 100 200 300 400 500 0 6 12 18 24 30 0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 0 2 4 6 8 10 0 1 2 3 4 5 6 7 0 2 4 6 8 10 0 2 4 6 8 10 t c = ?55 c 125 c 5 v v g s = 10 thru 6 v 3 v 4 v c r s s c os s c i s s v d s = 15 v i d = 1.7 a v g s = 10 v i d = 1.7 a v g s = 10 v v g s = 4.5 v 25 c b b $ b $ b p-cha nne l mo s f e t si2 3 0 3 ds-hf ( k i 2 3 0 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 threshold v oltage v ariance (v) v gs(th) power (w) e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s single pulse power normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) normalized ef fective t ransient thermal impedance ? on-resistance ( r ds(on) ) v g s ? gate-to-source v oltage (v) ? source current (a) i s 0.01 0.10 1.00 10.00 ?0.2 ?0.1 0.0 0.1 0.2 0.3 0.4 0.5 ?50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 2 1 0.1 0.01 10 ?4 10 ?3 10 ?2 10 ?1 0 3 1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 1.7 a i d = 250 a 10 1 10 t c = 25 c single pulse t j = 25 c t j = 150 c 0 2 4 6 8 10 t j ? t emperature ( c) t ime (sec) v sd ? source-to-drain v oltage (v) b b $ b b p-cha nne l mo s f e t si2 3 0 3 ds-hf ( k i 2 3 0 3 d s - h f)
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